Flexoelectric manipulation of ferroelectric polarization in self-strained tellurium

Prof. Yang Lu's group and collaborators recently published an article in Science Advances, demonstrating a novel flexoelectric strategy to enhance ferroelectric and piezoelectric properties in self-strained tellurium (Te) nanowires. By leveraging ultrafast vapor growth, the team achieved a remarkable flexoelectric field of 9.55 microcoulombs per square centimeter, inducing an 18° polarization rotation—comparable to conventional ferroelectric materials like PbTiO₃. This innovation boosts ferroelectric coercivity by 165% and piezoelectric responses by 75%, overcoming limitations of traditional strain engineering. Key techniques include atomic-scale polarization mapping via HAADF-STEM, in situ ferroelectric tunnel junction (FTJ) modulation, and anisotropic energy harvesting in nanogenerators, which outperform existing counterparts with higher output voltages (2.40 V) and power density. The work highlights Te’s potential in flexible electronics, neuromorphic computing, and self-powered systems, offering a scalable, substrate-free approach for next-generation electromechanical devices. This research paves the way for single-element ferroelectrics in high-performance applications, from non-volatile memory to wearable sensors.

Article in Science Advances:

Flexoelectric manipulation of ferroelectric polarization in self-strained tellurium | Science Advances